A Reliable Cross-Point MLC ReRAM with Sneak Current Compensation

Abstract

In this paper, a reliable cross-point MLC ReRAM is introduced and fully integrated with 350nm CMOS technology. Both resistance states and variations are widely investigated with different compliance current. The self-termination scheme is adopted to prevent overstress to switched cell in set operation. As a result of self termination, write failure is prohibited and the uniformity on LRS of 300 uA compliance improved 2.3 times. In order to deter the compliance current offset in set operation, a sneak current compensation scheme of which controlled by ADC is proposed.