Critical electric field and self-heating in 3D SiC/Si MOSFETs

Abstract

In this paper we evaluated the electric field and self-heating temperature of 3D 3C-SiC/Si MOSFETs. Using the numerical analysis simulator Silvaco Atlas, this device was found to have a critical electric field of 6.68×106 V/cm at a breakdown voltage close to 312V. Using COMSOL program, self-heating effect was investigated, and found that the temperature reached 866K at VDS=312V and VGS=5V.