Design and mixed modeling of PhCCD with vertical antiblooming structure

Abstract

Mixed modeling of photosensitive CCD-features is given. The modeling includes simulation of the following design stages: 2D-fabrication process, 2D-potential and electric field distributions and wells providing desired characteristics of the CCD pixel, charge capacity, photosensitivity, noises, modulation transfer function, and output signal using specialized CAD. A new four-phase PhCCD-chip with size of photosensitive area equal to 582(H) X 500 (V) pixels, pixel size 17 (V) X 11 (H) micrometers , photodiode accumulator, and vertical antiblooming structure has been simulated and designed.