A 2.5 V 0.35 /spl mu/m CMOS current conveyor and high frequency high-Q band-pass filter

S. Ben Salem, A. Fakhfakh, M. Loulou, P. Loumeau, N. Masmoudi
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引用次数: 4

Abstract

In this paper, we present a design of a CMOS current conveyor. Thus, the first step in our design was to improve static and dynamic behavior of second generation current conveyors. The translinear implementation in CMOS technology was first studied. We notice that it presents a lower RX than those of Y and Z. However, this value (about 1 k/spl Omega/) may reduces the RF design's performances such as filters and oscillators, so it became necessary to make an implementation of a new improved CCII structure for RF design's implementation. This new structure is used as a basic building block of a tunable current and voltage mode band-pass filter. The Q-factor and the central frequency can be electronically controlled by mean of DC bias current. To validate this result, a Pspice simulation results are presented showing very interesting frequency and Q factor performances (the central frequency is tunable in the range of 1.2-1.6 GHz and Q from 80 to 313).
一个2.5 V 0.35 /spl mu/m CMOS电流输送和高频高q带通滤波器
本文介绍了一种CMOS电流输送器的设计。因此,我们设计的第一步是改善第二代电流输送机的静态和动态性能。首先研究了在CMOS技术上的跨线性实现。我们注意到它呈现出比Y和z更低的RX。然而,这个值(大约1 k/spl ω /)可能会降低RF设计的性能,如滤波器和振荡器,因此有必要为RF设计的实现实现一个新的改进的CCII结构。这种新结构被用作可调谐电流和电压模式带通滤波器的基本构建块。q因子和中心频率可以通过直流偏置电流进行电子控制。为了验证这一结果,Pspice仿真结果显示了非常有趣的频率和Q因子性能(中心频率在1.2-1.6 GHz范围内可调,Q从80到313)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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