{"title":"The use of MOSFETS in high-dose-rate radiation environments","authors":"R. Severns, R. Blanchard","doi":"10.1109/APEC.1986.7073304","DOIUrl":null,"url":null,"abstract":"In military switching applications, the power MOSFET has become the device of choice. Military applications require survival, if not operation, during the prompt gamma pulse resulting from a nuclear explosion. This paper discusses the behavior of MOSFETs in high-dose-rate radiation environments, relating the performance to the device's structure. This understanding is used as a starting point for improving system performance by optimizing both device and circuit parameters.","PeriodicalId":302790,"journal":{"name":"1986 IEEE Applied Power Electronics Conference and Exposition","volume":"43 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1986-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1986 IEEE Applied Power Electronics Conference and Exposition","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/APEC.1986.7073304","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In military switching applications, the power MOSFET has become the device of choice. Military applications require survival, if not operation, during the prompt gamma pulse resulting from a nuclear explosion. This paper discusses the behavior of MOSFETs in high-dose-rate radiation environments, relating the performance to the device's structure. This understanding is used as a starting point for improving system performance by optimizing both device and circuit parameters.