{"title":"A LED-Compatible Current Regulator with Integrated Electrically Adjustable Sensor","authors":"Zeheng Wang, Shengji Wang, Yuanzhe Yao","doi":"10.1109/ISNE.2019.8896397","DOIUrl":null,"url":null,"abstract":"In this letter, a high-performance electrically adjust-able current regulator is proposed on the LED-compatible AlGaN/GaN platform. The regulator features an electrical controlled gate and an integrated sensor, which could effectively feedback the cathode potential into the channel near the gate. Therefore, a large adjustable range of current regulating, more than 300 mA/mm, is achieved with a maximum ripple of 34.4 mA/mm. Compared with the conventional devices that just own sensor or p-GaN gate, the proposed regulator exhibits reasonable operation point and low current ripple in addition to the large-range electrically adjustable functionality. These features render the proposed regulator's notable potential in commercialization of high-density integrated LED components, charging stations and so on.","PeriodicalId":405565,"journal":{"name":"2019 8th International Symposium on Next Generation Electronics (ISNE)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 8th International Symposium on Next Generation Electronics (ISNE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISNE.2019.8896397","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
In this letter, a high-performance electrically adjust-able current regulator is proposed on the LED-compatible AlGaN/GaN platform. The regulator features an electrical controlled gate and an integrated sensor, which could effectively feedback the cathode potential into the channel near the gate. Therefore, a large adjustable range of current regulating, more than 300 mA/mm, is achieved with a maximum ripple of 34.4 mA/mm. Compared with the conventional devices that just own sensor or p-GaN gate, the proposed regulator exhibits reasonable operation point and low current ripple in addition to the large-range electrically adjustable functionality. These features render the proposed regulator's notable potential in commercialization of high-density integrated LED components, charging stations and so on.