Performance Analysis of Self-biasing Technique for Differential RF-DC Rectifier in IoT Application

Abstract

In this study, the various self-biasing techniques for the complementary cross-coupled rectifier are analyzed and presented for their merits in improving the power conversion efficiency (PCE) across the input power (PIN) range. The core complementary cross-coupled rectifier is implemented with the 55nm CMOS technology, while all the control circuitries are implemented with ideal models or parameters extracted after characterizing the device. The simulation for the RF-DC rectifier operating at 900MHz with a load of 100kΩ shows a similar trend to the literature’s performance.