38 GHz low-power static frequency divider in SiGe bipolar technology

2002 IEEE International Symposium on Circuits and Systems. Proceedings (Cat. No.02CH37353) Pub Date : 2002-08-07 DOI:10.1109/ISCAS.2002.1010479

G. Ritzberger, J. Böck, H. Knapp, L. Treitinger, A. Scholtz

引用次数: 5

Abstract

A low-power static frequency divider manufactured in 0.4 /spl mu/m/85 GHz-f/sub T/ SiGe bipolar technology with division ratios of 16 and 256 is presented. The circuit is optimized for low power consumption and operates up to 38.9 GHz maximum input frequency consuming only 174 mW from the 3 V supply.

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38 GHz低功耗静态分频器采用SiGe双极技术

提出了一种采用0.4 /spl mu/m/85 GHz-f/sub - T/ SiGe双极技术制造的低功耗静态分频器，分频比分别为16和256。该电路针对低功耗进行了优化，最大输入频率高达38.9 GHz，仅消耗3v电源174 mW。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2002 IEEE International Symposium on Circuits and Systems. Proceedings (Cat. No.02CH37353)

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