A review on gallium nitride switching power devices and applications

Abstract

Gallium Nitride (GaN) are, currently, the most promising semiconductor material concerning new power devices applied in switched-mode power supplies. The great advantages of GaN transistors are their outstanding properties as raw material availability and the technological process continued improvement. Therefore, this paper outlines the general scenario in the development of GaN-based power semiconductor devices and its recent progresses in the power electronics area. Possible applications of this device in the field of electronic efficient lighting are also discussed. In addition, the paper comprises design challenges and future trends for these devices.