Risk assessment of bond pad stacks: Combined utilization of nanoindentation and FE-modeling

2016 17th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE) Pub Date : 2016-04-18 DOI:10.1109/EUROSIME.2016.7463404

J. Albrecht, G. M. Reuther, J. Brueckner, J. Auersperg, S. Rzepka, R. Pufall

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引用次数: 2

Abstract

Wire bonding as well as wafer probing can lead to oxide layer cracking. In combination with metal migration electrical failures may occur. Loading conditions comparable to the wire bonding process can be achieved using a nanoindenter. In this work a spherical tip has been used at first to determine material properties of the silicon nitride film and also to attain cracking of the film material. Based on the experimental results a finite element model using ABAQUS standardTM was established representing the experimentally observed load-displacement behavior. The introduction of the extended finite element method as well as the cohesive surface approach allow to describe different failure modes. The results of these investigations can be used to avoid failures like oxide layer cracking during wire bonding or during the wafer testing process.

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键合垫堆的风险评估:纳米压痕和有限元模型的联合应用

焊线和晶圆探测都可能导致氧化层开裂。与金属迁移相结合，可能会发生电气故障。使用纳米压头可以实现与线键合过程相当的加载条件。在这项工作中，首先使用球形尖端来确定氮化硅薄膜的材料性能，并获得薄膜材料的开裂。在此基础上，利用ABAQUS标准软件建立了表征试验观测载荷-位移特性的有限元模型。扩展有限元法和内聚面法的引入允许描述不同的破坏模式。这些研究的结果可以用来避免在焊线或晶圆测试过程中氧化层破裂等故障。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2016 17th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)

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