A novel 0.35µm 800V BCD technology platform for offline applications

Abstract

Here is presented the development of the new BCD800 platform which conjugates 3.3V CMOS logic, 5/25/30V power devices and a 800V nLDMOS in a 0.35μm technology node. LV components can be placed into a floating pocket which can be referred up to 650V, furthermore this process features an innovative lateral junction isolation module obtained by a boron-doped poly-filled deep trench with great advantages in terms of performances and area saving. The process industrialization has been demonstrated and a fully functional test vehicle is available in the form of a single-chip High Voltage Smart Gate Driver for half bridges.