The temperature dependence of threshold voltage variations due to oblique single grain boundary in 3D NAND unit cells

Abstract

In this work, the oblique single grain boundary (oSGB) in 3D NAND unit cells is simulated with various temperatures to study threshold voltage (Vth) variation due to oSGB in 3D NAND unit cell of poly-Si channel. As the temperature increases, the overall Vth variations with oSGB decrease because of thermionic effect and more free carrier from generation effect. In addition, the difference of Vth variation become larger as the oSGB leans toward source or drain sides in poly-Si channel.