Time-resolved photoluminescence studies on transferred thin film InP epilayers

Abstract

Time-resolved photoluminescence data are reported on InP thin films transferred on glass substrates. The films were kept below 1.1 /spl mu/m in thickness to reduce the photon recycling effect. The data were taken by means of the time-correlated single photon counting technique. The thin films were grown by the liquid phase epitaxial process. The lower doped n-type samples showed evidence of Shockley-Read-Hall recombination. For higher electron densities, the lifetime is found to be controlled by the radiative recombination process. An estimate of the radiative recombination coefficient, B, was made in terms of the photon recycling factor.<>