Exploring ageing effects on integrated power devices (I–V) for health monitoring

2011 7th Conference on Ph.D. Research in Microelectronics and Electronics Pub Date : 2011-07-03 DOI:10.1109/PRIME.2011.5966249

E. Marcault, M. Breil, A. Bourennane, P. Tounsi, P. Dupuy

引用次数: 0

Abstract

Based on 3D FEM electro thermo mechanical simulations (COMSOL) and 2D multi-cells simulation (Sentaurus TCAD), we explore the impact of main ageing phenomena (bonding wire lift off and solder joint delamination) at the origin of power assembly failures, on the electrical characteristics of MOS gated power devices (IGBT, VDMOS). Electrical characteristics variations are analyzed with a view to using them for health monitoring of embedded power assemblies.

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探索用于健康监测的集成电源设备(I-V)的老化效应

基于三维有限元电热机械模拟(COMSOL)和二维多单元模拟(Sentaurus TCAD)，我们探讨了电源组件失效的主要老化现象(焊线脱落和焊点分层)对MOS门控电源器件(IGBT, VDMOS)电气特性的影响。分析了电特性变化，以期将其用于嵌入式电源组件的健康监测。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2011 7th Conference on Ph.D. Research in Microelectronics and Electronics

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