Analog single event on low noise amplifier with no source inductor

Abstract

This article explores the analog single event transient (analog-SET) performance of a cascoded RF (radio frequency) low noise amplifier (LNA) with no source inductor through numerical device simulations. Two different scenarios are used to carry out radiation on LNA studies; (i) no-RF signal is applied (only bias); and in addition, (ii) RF signal with bias. In the first scenario, the collected charge $(\mathrm{QC}_{oll})$ is evaluated in the time domain, whereas in the later scenario, the LNA output spectrum is examined in the frequency domain by using a spectrogram. The collected charge $(\mathrm{QC}_{oll)}$ generated by the analog-SET (current or voltage) acts as a performance measure for determining the severity of the particles on the cascoded LNA’s common source topology (CS) and common gate topology (CG) devices. For the given LET (linear energy transfer) (MeV-cm2/ mg) value, the channel center L2 is the most vulnerable region in the common gate stage, and the same is true for the susceptible device in cascoded LNA