Normal incident intersubband infrared detector using n-type InGaAs/GaAs quantum wells

1995 53rd Annual Device Research Conference Digest Pub Date : 1995-06-19 DOI:10.1109/DRC.1995.496296

G. Karunasiri, R. Shih, J. Chen

引用次数: 2

Abstract

Recently, normal incident intersubband absorption has been observed using InGaAs based quantum well structures. In this abstract, we report the first demonstration of a normal incident infrared detector using n-type In/sub x/Ga/sub 1-x/As/GaAs multiple quantum wells.

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采用n型InGaAs/GaAs量子阱的正入射子带间红外探测器

近年来，利用InGaAs基量子阱结构观测到了正入射子带间吸收。本文首次利用n型In/sub -x/ Ga/sub - 1-x/As/GaAs多量子阱演示了一种正入射红外探测器。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

1995 53rd Annual Device Research Conference Digest

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