{"title":"Fractal Research to the Production of High-strength Materials","authors":"S. Choi, Eunsung Jekal","doi":"10.55708/js0110006","DOIUrl":null,"url":null,"abstract":": SiC ceramics are excellent materials applied at high temperatures because of their light-weight, excellent high-temperature strength, and high thermal shock resistance. For better engineering properties, we made SiC with fractal lattices. Stress-strain behavior and modulus changes from room temperature to 1,250 o C were analyzed using LAMMPS S/W, a molecular dynamics program. As a result of this study, it was confirmed that the modulus of elasticity of SiC crystals changed in the range of about 475 GPa to 425 GPa as it increased from room temperature to 1,250 o C. The stress-displacement characteristics of SiC crystals, which could not be measured at a high temperature of 1,000 o C or higher, could be ensured.","PeriodicalId":156864,"journal":{"name":"Journal of Engineering Research and Sciences","volume":"6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Engineering Research and Sciences","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.55708/js0110006","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
: SiC ceramics are excellent materials applied at high temperatures because of their light-weight, excellent high-temperature strength, and high thermal shock resistance. For better engineering properties, we made SiC with fractal lattices. Stress-strain behavior and modulus changes from room temperature to 1,250 o C were analyzed using LAMMPS S/W, a molecular dynamics program. As a result of this study, it was confirmed that the modulus of elasticity of SiC crystals changed in the range of about 475 GPa to 425 GPa as it increased from room temperature to 1,250 o C. The stress-displacement characteristics of SiC crystals, which could not be measured at a high temperature of 1,000 o C or higher, could be ensured.