Charge Effects on Semiconductor-Metal Phase Transition in Mono-layer MoTe2

Jixuan Wu, Xiaolei Ma, Jiezhi Chen, Xiangwei Jiang
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Abstract

To understand the charge effects on semiconductor-metal phase transition in monolayer MoTe2, the modulations of phase transition energies with electrons and holes doping are studied by using the first principle calculation. It is found that the charge will make the total energy of the distorted metal phase lower than the semiconductor phase. Also, the barrier of phase transition from the semiconductor phase to the distorted metal phase can be decreased. Our results can well explain the experimentally observed resistance switching in MoTe2 layer, indicating that the charge doping can be an effective approach to control the phase switching in MoTe2 layer.
电荷对单层MoTe2半导体-金属相变的影响
为了了解电荷对单层MoTe2中半导体-金属相变的影响,利用第一性原理计算研究了电子和空穴掺杂对相变能量的调制。结果表明,电荷使畸变金属相的总能量低于半导体相的总能量。此外,从半导体相到扭曲金属相的相变屏障也可以降低。我们的研究结果可以很好地解释实验中观察到的MoTe2层的电阻开关,表明电荷掺杂可以作为一种有效的方法来控制MoTe2层的相开关。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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