Modeling Radiation Damage Effects in 3D Pixel Digitization for the ATLAS Detector

V. Wallangen
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Abstract

Silicon Pixel detectors are at the core of the current and planned upgrade of the ATLAS detector. As the detector in closest proximity to the interaction point, these detectors will be exposed to a significant amount of radiation over their lifetime: before the High Luminosity phase of the Large Hadron Collider (HL-LHC) the innermost layers will receive a fluence in excess of $10^{15}$ n$_\mathrm{eq}$/cm$^2$ and the HL-LHC detector upgrades must cope with an order of magnitude higher fluence integrated over their lifetimes. This work presents the details of a new simulation model that includes radiation damage effects to the 3D Pixel sensors for the ATLAS detector.
ATLAS探测器三维像素数字化辐射损伤效应建模
硅像素探测器是ATLAS探测器当前和计划升级的核心。探测器的最接近的交互点,这些探测器将暴露在大量的辐射在他们的一生中:高亮度阶段前的大型强子对撞机(HL-LHC)最里层将收到影响超过10美元^ {15}$ n $ _ \ mathrm {eq} /厘米^ 2美元和美元HL-LHC探测器升级必须应对高一个数量级的影响整合的一生。这项工作提出了一个新的模拟模型的细节,其中包括辐射损伤对ATLAS探测器的3D像素传感器的影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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