Overcurrent and Short-Circuit Protection Method using Desaturation Detection of SiC MOSFET

Jinwoo Kim, Younghoon Cho
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引用次数: 16

Abstract

This paper present overcurrent and short-circuit protection methods for medium voltage silicon carbide(SiC) MOSFETs. Contrary to other protection methods such as a Rogowski coil, the desaturation detection can be simply designed and applied to the general gate drivers. Thus, this paper proposes the design of the desaturation detection circuit. In order to achieve fast protection performance, additional issues of desaturation detection were described. In the end, the protection circuits are evaluated in short-circuit and overcurrent with the 1200 V SiC module and 1700 V SiC discrete.
基于SiC MOSFET去饱和检测的过流短路保护方法
本文介绍了中压碳化硅mosfet的过流和短路保护方法。与Rogowski线圈等其他保护方法相反,去饱和检测可以简单地设计并应用于一般栅极驱动器。因此,本文提出了去饱和检测电路的设计。为了实现快速保护性能,描述了去饱和检测的附加问题。最后,用1200v SiC模块和1700v SiC分立电路对保护电路进行了短路和过流评估。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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