A voltage-controlled oscillator for a 300 MHz high-temperature transceiver realized in 0.5 /spl mu/m SOS technology

Abstract

This paper presents a study of the design of a 300-MHz voltage-controlled oscillator (VCO) implemented in a 0.5-/spl mu/m Silicon-On-Sapphire (SOS) CMOS technology. The circuit is designed for use in a frequency synthesizer in a high-temperature (200/spl deg/C) transceiver. Several issues relating to high-temperature applications as well as the overall system architecture are presented. The design of the VCO is emphasized in this paper, but a programmable divider, phase detector/charge pump and loop filter were also designed for use in closed-loop tests of the VCO and are briefly discussed. Prototyping and testing procedures are discussed and the results of the prototyped circuits are evaluated.