P. Dai, Honglu Zhang, Tie Li, Yuelin Wang, J. Chao, C. Fan
{"title":"Improvement of DNA Origami's adsorption on silicon substrate","authors":"P. Dai, Honglu Zhang, Tie Li, Yuelin Wang, J. Chao, C. Fan","doi":"10.1109/NEMS.2013.6559826","DOIUrl":null,"url":null,"abstract":"DNA origami, in which a long single strand of DNA is folded into a shape using shorter `staple Strands', promises low-cost ways to create nanoscale shapes and can even display patterns of binding sites of 6-nm-resolution, in principle allowing complex arrangements of carbon nanotubes, silicon nanowires, or quantum dots [1]. However, adsorption of origami appears better results on mica substrate, which cannot compatible with the complementary metal oxide semiconductor (CMOS) process. Here we describe a method to improve the adsorption of origami on silicon substrate, by quantitative control of the adsorption conditions, which will hopefully make contributions for churning out nanoscale shapes with CMOS process in the future.","PeriodicalId":308928,"journal":{"name":"The 8th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-04-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"The 8th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NEMS.2013.6559826","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
DNA origami, in which a long single strand of DNA is folded into a shape using shorter `staple Strands', promises low-cost ways to create nanoscale shapes and can even display patterns of binding sites of 6-nm-resolution, in principle allowing complex arrangements of carbon nanotubes, silicon nanowires, or quantum dots [1]. However, adsorption of origami appears better results on mica substrate, which cannot compatible with the complementary metal oxide semiconductor (CMOS) process. Here we describe a method to improve the adsorption of origami on silicon substrate, by quantitative control of the adsorption conditions, which will hopefully make contributions for churning out nanoscale shapes with CMOS process in the future.