Improvement of DNA Origami's adsorption on silicon substrate

P. Dai, Honglu Zhang, Tie Li, Yuelin Wang, J. Chao, C. Fan
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Abstract

DNA origami, in which a long single strand of DNA is folded into a shape using shorter `staple Strands', promises low-cost ways to create nanoscale shapes and can even display patterns of binding sites of 6-nm-resolution, in principle allowing complex arrangements of carbon nanotubes, silicon nanowires, or quantum dots [1]. However, adsorption of origami appears better results on mica substrate, which cannot compatible with the complementary metal oxide semiconductor (CMOS) process. Here we describe a method to improve the adsorption of origami on silicon substrate, by quantitative control of the adsorption conditions, which will hopefully make contributions for churning out nanoscale shapes with CMOS process in the future.
DNA折纸在硅衬底上吸附性能的改进
DNA折纸技术是用较短的“短链”将长单链DNA折叠成某种形状,它有望以低成本的方式创造纳米级形状,甚至可以显示6纳米分辨率的结合位点图案,原则上允许碳纳米管、硅纳米线或量子点的复杂排列[1]。然而,折纸在云母衬底上的吸附效果较好,与互补金属氧化物半导体(CMOS)工艺不兼容。本文描述了一种通过定量控制吸附条件来改善折纸在硅衬底上吸附的方法,有望为未来利用CMOS工艺生产纳米级形状做出贡献。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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