Coupling between metallic microstrips on dielectric sustrates

M. Tecpoyotl-Torres, N. Benitez-Ruiz, M. Torres-Cisneros, O. Ibarra-Manzano, D. May-Arrioja, J. Sánchez-Mondragón
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Abstract

The analysis and simulation of the coupling between microstrips is realized, showing the corresponding capacitive or inductive walls. We analyze their interference and the changes produced in the electric and magnetic fields, as well as the distance dependence of the interference. The conductive lines on silicon and their crosstalk, produced when their distance is shorter that their width, is considered. The simulations were carried out with FEMLAB.
介电表面金属微带间的耦合
实现了微带间耦合的分析与仿真,给出了相应的电容或感应壁。分析了它们之间的相互干扰以及在电场和磁场中产生的变化,以及这种干扰与距离的关系。考虑了硅上导线的距离小于宽度时产生的串扰。利用FEMLAB进行了仿真。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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