Simulations for the dynamic response of single-transit SiC IMPATTs

Abstract

We present simulation results for the dynamic characteristics of single-transit SiC IMPATT devices. An iterative Monte Carlo-Crank-Nicholson technique has been used to solve the coupled electron transport-heat conduction problem. Our results show that the internal power generation profile within the SiC IMPATT device can be very non-uniform. The internal heating is seen to degrade device efficiency, operating frequency, reduce the output current, and increase the transit time.