{"title":"Self-Consistent Simulation of Heating Effects in Nanoscale Devices","authors":"D. Vasileska, S. Goodnick, K. Raleva","doi":"10.1109/IWCE.2009.5091146","DOIUrl":null,"url":null,"abstract":"In this paper we present state of the art modeling of coupled electron-phonon transport in nanoscale CMOS SOI devices, in order to elucidate from a microscopic standpoint the role of device dimensions, boundary conditions and various material strategies on self-heating in this technology.","PeriodicalId":443119,"journal":{"name":"2009 13th International Workshop on Computational Electronics","volume":"2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 13th International Workshop on Computational Electronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWCE.2009.5091146","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
In this paper we present state of the art modeling of coupled electron-phonon transport in nanoscale CMOS SOI devices, in order to elucidate from a microscopic standpoint the role of device dimensions, boundary conditions and various material strategies on self-heating in this technology.