Theoretical Modeling of Secondary Electron Yield Using First-Principles Input: Comparison with Experimental Measurements

M. Polak, I. Matanovic, Ryan Johnson, R. Gutierrez, D. Morgan
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Abstract

Secondary electron yield of a material is a crucial factor in designing many electronic devices, from electron multipliers to high-power radio frequency devices used in the aerospace industry. In the latter, it is key in mitigating the highly destructive multipactor, where a low value of secondary electron yield is desired. In this work we present results for select elemental metals obtained using a newly developed, state-of-the-art, Monte Carlo code for modeling secondary electron emission with entirely first principle input. The results are compared with the available experimental data.
使用第一原理输入的二次电子产率的理论建模:与实验测量的比较
材料的二次电子产率是设计许多电子设备的关键因素,从电子倍增器到航空航天工业中使用的高功率射频设备。在后者中,它是减轻高破坏性多因子的关键,其中需要低的二次电子产额值。在这项工作中,我们展示了使用新开发的最先进的蒙特卡罗代码获得的选择元素金属的结果,该代码用于模拟完全第一原理输入的二次电子发射。结果与现有实验数据进行了比较。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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