Torus Breakdown in a Uni Junction Memristor

J. Ginoux, R. Meucci, S. Euzzor, A. D. Garbo
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引用次数: 7

Abstract

Experimental study of a uni junction transistor (UJT) has enabled to show that this electronic component has the same features as the so-called “memristor”. So, we have used the memristor's direct current (DC) current-voltage characteristic for modeling the UJT's DC current-voltage characteristic. This led us to confirm on the one hand, that the UJT is a memristor and, on the other hand to propose a new four-dimensional autonomous dynamical system allowing to describe experimentally observed phenomena such as the transition from a limit cycle to torus breakdown.
单结记忆电阻器的环面击穿
单结晶体管(UJT)的实验研究表明,这种电子元件与所谓的“忆阻器”具有相同的特性。因此,我们使用忆阻器的直流(DC)电流-电压特性来模拟UJT的直流电流-电压特性。这使我们一方面证实了UJT是一个忆阻器,另一方面提出了一个新的四维自主动力系统,允许描述实验观察到的现象,如从极限环到环面击穿的转变。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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