Ab-initio modeling of magneto-electronic devices

Abstract

We present a first-principle based computational framework to model low-dimensional magnetic materials and their magnetization dynamics. We apply our method first on well-known 2D magnetic materials such as CrI3 and CrBr3. Next, we apply our method on transition metal doped 2D transition-metal dichalcogenides (TMDs). Finally, as an example of our device modelling methodology, we model a magnetic memory device using an interface between a 2D topological insulator and a 2D FM and show that a very fast switching of magnetic domain is possible in such devices (a fast write operation).