Passive mode-locking of AlGaInAs quantum well laser, modelling and experiment

2009 IEEE LEOS Annual Meeting Conference Proceedings Pub Date : 2009-12-01 DOI:10.1109/LEOS.2009.5343169

A. C. Bryce, P. Stolarz, J. Javaloyes, L. Hou, M. Sorel, S. Balle

引用次数: 1

Abstract

We have developed a comprehensive theoretical description of passive mode-locked semiconductor lasers based on a coarse-grained time-domain approach. The results are compared with the performance of a passively mode-locked AlGaInAs strained quantum well lasers.

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AlGaInAs量子阱激光器的被动锁模、建模与实验

基于粗粒度时域方法，对无源锁模半导体激光器进行了全面的理论描述。结果与被动锁模AlGaInAs应变量子阱激光器的性能进行了比较。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2009 IEEE LEOS Annual Meeting Conference Proceedings

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