Correlations between green luminescence efficiency, intrinsic defects and co-doping Cl and S in ZnO phosphors

Yongneng Xiao, Huiqing Sun, Yi Xu, Shi-Tao Han
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Abstract

First-principles pseudo-potential approach on complete zinc oxide (ZnO), vacant O (ZnO∶Vo), vacant Zn (ZnO∶VZn), interstitial Zn (ZnO∶Zni), chloride (Cl) and sulfur (S) co-doped defective ZnO (ZnO∶ClSVZn, ZnO∶ClSZni) reveal that Vo is a shallow donor dopant which has nothing to do with green emission. VZn and Zni both induce green emission recombination levels in the gap. When Cl and S co-dope in defective ZnO, they will enhance the green emission luminescence intensity, because they can promote the formations of VZn and Zni defects.
ZnO荧光粉中Cl和S共掺杂与绿色发光效率、本征缺陷的关系
对完全氧化锌(ZnO)、空位O (ZnO∶Vo)、空位Zn (ZnO∶VZn)、间隙Zn (ZnO∶Zni)、氯(Cl)和硫(S)共掺杂缺陷ZnO (ZnO∶ClSVZn、ZnO∶ClSZni)的第一线原理赝势分析表明,Vo是一种浅层供体掺杂剂,与绿色发光无关。VZn和Zni都能诱导间隙中的绿色发射复合水平。当Cl和S共掺杂在缺陷ZnO中时,它们会增强绿色发射发光强度,因为它们可以促进VZn和Zni缺陷的形成。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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