Electron emission properties of gated silicon field emitter arrays for charge neutralization device in ion implantation system

Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737) Pub Date : 2004-07-11 DOI:10.1109/IVNC.2004.1354927

Y. Gotoh, K. Nakamura, T. Kojima, H. Tsuji, J. Ishikawa, T. Ikejiri, S. Umisedo, S. Sakai, N. Nagai

引用次数: 0

Abstract

The effect of the number of tips (4000 and 16000) and gate aperture (1.3 /spl mu/m and 1.6 /spl mu/m) on the energy distribution of a silicon field emitter array were investigated. Energy distribution of the emitted electrons was measured in ultrahigh vacuum using an electrostatic energy analyzer. Results showed that narrower gate aperture and less tip-numbers are necessary for narrower energy spread and smaller peak energy shift.

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离子注入系统中电荷中和装置用栅极硅场发射阵列的电子发射特性

研究了尖端数(4000和16000)和栅极孔径(1.3 /spl mu/m和1.6 /spl mu/m)对硅场发射极阵列能量分布的影响。利用静电能量分析仪测量了超高真空条件下发射电子的能量分布。结果表明，减小栅极孔径和减小尖头数可以减小能量扩散和峰值能量漂移。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)

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