GaAs converter IC's for C-band DBS receivers

S. Yoshida, Kazunari Satoh, T. Miya, T. Umemoto, H. Hirayama, Katsunori Miyagaki, J. Leong
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引用次数: 2

Abstract

GaAs converter IC's for C-band DBS receivers were developed on 1.1/spl times/1.6 mm/sup 2/ chip using a 0.5 /spl mu/m MESFET process. This converter IC includes four(4) functional blocks; i.e. low noise amplifier(LNA), mixer(MIXER), oscillator(OSC) and IF amplifier(IFA). This converter IC has 2.7 dB noise figure and 43 dB conversion gain, and shows a tight gain distribution.
用于c波段DBS接收机的GaAs转换器IC
采用0.5 /spl mu/m MESFET工艺,在1.1/spl次/1.6 mm/sup /芯片上开发了用于c波段DBS接收机的GaAs转换器IC。该转换器IC包括四(4)个功能块;即低噪声放大器(LNA),混频器(mixer),振荡器(OSC)和中频放大器(IFA)。该转换器IC的噪声系数为2.7 dB,转换增益为43 dB,增益分布紧密。
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