Modeling of Multi-Finger SiGe HBTs and the Error Metrics of the Large Signal Model Performances

Abstract

A compact large-signal model for multi-finger SiGe HBTs is proposed and experimentally validated. The model formulation leads to a simple parameter extraction procedure. Model development was carried out for a multi-finger SiGe HBT fabricated in a commercial process technology. It consisted of 72 fingers each with a drawn emitter geometry of 2times20times0.5 mum2. Results show good fit between measured and simulated DC, S-parameter and LS characteristics