Multiple Quantum Well IMPATT Sources based on Si~3C-SiC Heterostructures Operating at Millimeter-Wave and Terahertz Frequency Bands

Abstract

The static, small-signal and noise characteristics of multiple quantum well (MQW) impact avalanche transit time (IMPATT) diodes operating at 94, 140, 220, 300 and 500 GHz frequencies have been investigated in this paper. The said MQW structures have been implemented by using Si~3C-SiC heterostructures. A self-consistent quantum drift-diffusion (SCQDD) model based simulation method has been used for the above mentioned studies. Simulation results show that Si~3C-SiC MQW IMPATT sources are highly proficient to provide considerably higher power output with significantly lower noise measure at aforementioned frequency bands as compared to conventional flat Si IMPATT sources.