Enhancement of Resonance by the Use of Multiple Tunnel Barriers in Bilayer Graphene-Based Interlayer Tunnel Field Effect Transistors

Abstract

Interlayer tunnel field effect transistors (ITFETs) make use of resonant tunneling between two layers of two-dimensional semiconductors to create a negative differential resistance. A narrow resonance allows for lowering the operating voltages in potential circuit applications. The use of multiple tunnel barriers is investigated as a means to obtain a narrow resonance, as the device dimensions are scaled down. For specificity, we analyze a bilayer graphene-based ITFET system.