A CAD methodology for the characterization of wide on-chip buses

I. Elfadel, A. Deutsch, G. Kopcsay, B. Rubin, H. Smith
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引用次数: 1

Abstract

In this paper, we describe a CAD methodology for the full electrical characterization of high-performance, on-chip data buses. The goal of this methodology is to allow the accurate modeling and analysis of wide, on-chip data buses as early as possible in the design cycle. The modeling is based on a manufacturing (rather than design-manual) description of the back-end-of-the-line (BEOL) cross section of a given technology and on a full yet contained description of the power-ground mesh in which the data-bus is embedded. One major aspect of the resulting electrical models is that they allow the designer to evaluate the wide bus from the three viewpoints of signal timing, crosstalk (both inductive and capacitive), and common-mode signal integrity. Another major aspect is that they take into account such important high-frequency phenomena as the dependence of the current return-path resistance on frequencies. The CAD methodology described in this paper has been extensively correlated with on-chip hardware measurements.
宽片上总线特性的CAD方法
在本文中,我们描述了一种CAD方法,用于高性能片上数据总线的完整电气特性。这种方法的目标是允许在设计周期中尽早对广泛的片上数据总线进行准确的建模和分析。建模是基于对给定技术的后端(BEOL)横截面的制造(而不是设计手册)描述,以及对嵌入数据总线的电源-地网格的完整但包含的描述。由此产生的电气模型的一个主要方面是,它们允许设计人员从信号时序、串扰(包括电感和电容)和共模信号完整性这三个角度来评估宽总线。另一个主要方面是,它们考虑了诸如电流返回路径电阻对频率的依赖等重要的高频现象。本文中描述的CAD方法与片上硬件测量广泛相关。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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