Optimization of fabrication processes of the mesa-type GaAs:Te blocked-impurity-band detector

B. Wang, Xiaodong Wang, Yulu Chen, Liwei Hou, Wei Xie, M. Pan
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Abstract

In this work, the device structure of the mesa-type GaAs:Te blocked-impurity-band detector was designed. The fabrication processes were presented briefly, and optimization of the fabrication processes was investigated. A 3-micron-thick SiO2 film was deposited as resist to substitute for photoresist in the 50-micron-deep mesa etching process. In addition, a bi-layer photoresist lithography technique was adopted to optimize the process of electrode fabrication. It is demonstrated that the device quality can be improved significantly after optimization.
平台型GaAs:Te阻塞杂质带探测器制作工艺的优化
本文设计了台面型GaAs:Te阻塞杂质带探测器的器件结构。简要介绍了制备工艺,并对制备工艺的优化进行了研究。在50微米深的台面蚀刻工艺中,沉积了一层3微米厚的SiO2薄膜作为光刻胶代替光刻胶。此外,采用双层光刻技术对电极的制作工艺进行了优化。结果表明,优化后的器件质量得到显著提高。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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