A. Andronov, Y. Nozdrin, A. V. Okomel’kov, A. Babenko, V. Varavin, D. Ikusov, R. N. Smirnov
{"title":"Stimulated radiation of optically pumped CdxHg1−xTe structures at room temperature","authors":"A. Andronov, Y. Nozdrin, A. V. Okomel’kov, A. Babenko, V. Varavin, D. Ikusov, R. N. Smirnov","doi":"10.1109/ICTON.2008.4598416","DOIUrl":null,"url":null,"abstract":"The experimental observation of stimulated radiation of optically pumped CdxHg1-xTe structures in the wavelength range of 1.4 - 4.5 mum is reported. In the experiments, graded-gap CdxHg1-xTe samples grown on GaAs and Si substrates by molecular beam epitaxy were used. Superluminescence of such structures was observed at 77 - 300 K under the pulsed pumping of the samples by a Nd:YAG laser at a wavelength of 1.064 mum. At room temperature, stimulated radiation was observed at wavelength of 1.4 - 1.7 mum. The obtained experimental data are the first results on the observation of stimulated radiation from graded-gap CdxHg1-xTe structures on Si and GaAs substrates at these wavelengths at room temperature.","PeriodicalId":230802,"journal":{"name":"2008 10th Anniversary International Conference on Transparent Optical Networks","volume":"15 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 10th Anniversary International Conference on Transparent Optical Networks","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICTON.2008.4598416","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
The experimental observation of stimulated radiation of optically pumped CdxHg1-xTe structures in the wavelength range of 1.4 - 4.5 mum is reported. In the experiments, graded-gap CdxHg1-xTe samples grown on GaAs and Si substrates by molecular beam epitaxy were used. Superluminescence of such structures was observed at 77 - 300 K under the pulsed pumping of the samples by a Nd:YAG laser at a wavelength of 1.064 mum. At room temperature, stimulated radiation was observed at wavelength of 1.4 - 1.7 mum. The obtained experimental data are the first results on the observation of stimulated radiation from graded-gap CdxHg1-xTe structures on Si and GaAs substrates at these wavelengths at room temperature.