A new fully differential second generation current controlled convey or using FG-MOS

R. Fani, E. Farshidi
{"title":"A new fully differential second generation current controlled convey or using FG-MOS","authors":"R. Fani, E. Farshidi","doi":"10.1109/IRANIANCEE.2012.6292314","DOIUrl":null,"url":null,"abstract":"This paper presents a new fully differential current controlled conveyor (FDCCCII) based on differential pair topology, which employs floating gate MOS transistors (FG-MOS). It uses floating gate MOSFETs at the input stage and has rail to rail structure. It operates with low supply voltage (±0.8v), low power consumption (lower than 600μw), and with wide range parasitic resistance (Rx). Simulation results by Hspice confirm validity of the proposed circuit.","PeriodicalId":308726,"journal":{"name":"20th Iranian Conference on Electrical Engineering (ICEE2012)","volume":"46 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"20th Iranian Conference on Electrical Engineering (ICEE2012)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRANIANCEE.2012.6292314","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4

Abstract

This paper presents a new fully differential current controlled conveyor (FDCCCII) based on differential pair topology, which employs floating gate MOS transistors (FG-MOS). It uses floating gate MOSFETs at the input stage and has rail to rail structure. It operates with low supply voltage (±0.8v), low power consumption (lower than 600μw), and with wide range parasitic resistance (Rx). Simulation results by Hspice confirm validity of the proposed circuit.
一种新的全差分第二代电流控制传输或使用FG-MOS
提出了一种基于差分对拓扑的全差动电流控制输送机(FDCCCII),该输送机采用浮栅MOS晶体管(FG-MOS)。它在输入级使用浮栅mosfet,并具有轨对轨结构。工作电压低(±0.8v),功耗低(低于600μw),寄生电阻范围宽(Rx)。Hspice仿真结果验证了该电路的有效性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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