Improved properties in albumen of duck egg based resistive switching memory by doping with Fe Ions

Abstract

Albumen of duck egg based, an environmentally friendly material, resistive switching memory is proposed in this work. The resistive switching properties of the device are improved by doping with Fe ions. The non-volatility of the device is demonstrated. A possible resistive switching filamentary model is proposed. The proposed memory device is possibly used in next-generation non-volatile memory application.