Analytical modeling and comparison of Triple gate MOSFET with Double gate MOSFET

Abstract

In this paper, we bring in the incomparable features of modification in symmetrical Triple-gate (TG) MOSFET. The modified structure of Triple gate (TG) MOSFET reduces short-channel effects (SCEs) in comparison of the Double-gate (DG) MOSFET model. The threshold voltage, the drain-induced barrier lowering (DIBL) and surface potential are calculated. We will also discuss a model for the trans-conductance, drain current and drain conductance. The proposed Triple-gate (TG) structure province increase in the trans-conductance and drain current and reduces the short-channel effects (SCEs), electric field and drain conductance and in comparison of the Double-gate (DG) MOSFET.