High power reverse blocking IGCT for power grid

Abstract

RB-IGCT is a controlled turn-off power semiconductor device with bidirection voltage withstand, which can be used as one of the new devices to solve the problems of phase change failure and DC system protection in HVDC applications. Reverse blocking IGCT has two types of multi-chip packaging and single-chip packaging on the packaging structure. This paper compares the comparison of two packaging, static, on-state and switching characteristics through simulation and test analysis. Meanwhile, the influence of life control on static and current properties are discussed. The advantages of different application topologies in volume, weight and reliability in the application of DC circuit breaker are compared. Finally, the protection parameter design of reverse resistance IGCT device in DC circuit breaker is analyzed.