A.V. Shturbin, V.A. Shalygyn, I. Titkov, V.L. Zerova
{"title":"Wide range coordinate-sensitive photodetector for laser controlled systems","authors":"A.V. Shturbin, V.A. Shalygyn, I. Titkov, V.L. Zerova","doi":"10.1109/CLEOE.2000.910149","DOIUrl":null,"url":null,"abstract":"Summary form only. At present the better part of coordinate-sensitive photodetectors is based on longitudinal photo-voltage effect in p-n junction. The linear range of their sensitivity via coordinate of illuminated region is limited by the diffusion length of non-equilibrium carriers for the semiconductor sensitive cell and does not exceed 2 mm. We present a new coordinate-sensitive photodetector design. Our device is based on detecting a magnetic part of the electromagnetic radiation from the semiconductor surface illuminated by interband light. The electromagnetic radiation is produced by currents of non-equilibrium carriers moving outside the region of the light excitation and separated by a surface barrier.","PeriodicalId":250878,"journal":{"name":"Conference Digest. 2000 Conference on Lasers and Electro-Optics Europe (Cat. No.00TH8505)","volume":"119 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Digest. 2000 Conference on Lasers and Electro-Optics Europe (Cat. No.00TH8505)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CLEOE.2000.910149","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Summary form only. At present the better part of coordinate-sensitive photodetectors is based on longitudinal photo-voltage effect in p-n junction. The linear range of their sensitivity via coordinate of illuminated region is limited by the diffusion length of non-equilibrium carriers for the semiconductor sensitive cell and does not exceed 2 mm. We present a new coordinate-sensitive photodetector design. Our device is based on detecting a magnetic part of the electromagnetic radiation from the semiconductor surface illuminated by interband light. The electromagnetic radiation is produced by currents of non-equilibrium carriers moving outside the region of the light excitation and separated by a surface barrier.