High frequency-high power static induction transistor

Abstract

The characteristics, physical construction, and application of a newly commercialized high-frequency SIT (static induction transistor) are discussed. The main features of this device are a lowering in the gate-to-source and gate-to-drain capacitances, and an increase in the breakdown voltage and power rating. These enhancements were brought about as a result of the introduction of new and refined manufacturing technologies. This SIT device is currently being applied in applications such as medium-wavelength radio transmitters and induction heaters.<>