Analysis of Schottky Multistage Voltage Doubler Rectifiers for RF Energy Harvesting Applications

Alex Mouapi, N. Hakem, N. Kandil
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Abstract

Multistage Voltage Doubler Rectifiers (MVDR) are known to increase the level of the output DC voltage of a Rectifying Antenna (rectenna). However, the RF / DC conversion efficiency is very sensitive to the internal electrical characteristics of the used diode. This paper then proposes an analysis of the performance of an MVDR according to the features of the Schottky diode. A Rectenna Figure of Merit (RFoM), considering the DC output voltage as well as the RF / DC conversion efficiency, is defined to analyze MVDRs with up to ten stages. This analysis makes it possible to obtain that the most effective rectifier diode differs depending on the number of stages of the rectifier. More specifically, it is observed that, for two stages, the most efficient diode is the Schottky diode HSMS2820. For MVDR with more than five stages, the SMS 7630 diode is more suitable for low input power levels (less than 5 dBm). It is also observed that, for power levels higher than 5 dBm, the HSMS2850 diode offers the best compromise in terms of output DC voltage and conversion efficiency.
用于射频能量收集的肖特基多级倍压整流器分析
多级倍压整流器(MVDR)可以提高整流天线(整流天线)的输出直流电压水平。然而,射频/直流转换效率对所用二极管的内部电特性非常敏感。本文根据肖特基二极管的特点,对MVDR的性能进行了分析。考虑到直流输出电压和射频/直流转换效率,定义了一个整流天线性能图(rfm)来分析多达十级的mvdr。这种分析可以得出,最有效的整流二极管取决于整流的级数而不同。更具体地说,观察到,对于两个级,最有效的二极管是肖特基二极管HSMS2820。对于5级以上的MVDR, SMS 7630二极管更适合低输入功率电平(小于5 dBm)。还可以观察到,对于高于5 dBm的功率水平,HSMS2850二极管在输出直流电压和转换效率方面提供了最佳折衷。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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