Low voltage, high efficiency class E GaAs power amplifiers for mobile communications

T. Sowlati, C. Salama, J. Sitch, G. Rabjohn, D. Smith
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引用次数: 15

Abstract

In this paper a class E power amplifier for mobile communications is presented. The advantages of class E over class B and class C power amplifiers in a low voltage design is discussed. A fully integrated class E power amplifier operating at 835 MHz is designed, fabricated and tested. The circuit is implemented in a self-aligned-gate, depletion mode GaAs MESFET process. The amplifier delivers 24 dBm power to the load with a power added efficiency greater than 50% at a supply voltage of 2.5 V. The power dissipated in the integrated matching networks is 15 times the power dissipated in the transistors.
低电压,高效率的E类GaAs功率放大器,用于移动通信
介绍了一种用于移动通信的E类功率放大器。讨论了E类功率放大器在低压设计中相对于B类和C类功率放大器的优点。设计、制造并测试了工作频率为835 MHz的全集成E类功率放大器。该电路采用自对准栅极耗尽模式GaAs MESFET工艺实现。该放大器在2.5 V电源电压下为负载提供24 dBm功率,功率附加效率大于50%。集成匹配网络的功耗是晶体管功耗的15倍。
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