{"title":"Analysis of Different Gate Dielectric Materials in Carbon Nanotube Field Effect Transistor (CNFET) Using Optimization Technique","authors":"Ankit Dixit, N. Gupta","doi":"10.1109/EDKCON.2018.8770503","DOIUrl":null,"url":null,"abstract":"The main objective of this paper is to select the suitable gate dielectric material for the carbon nanotube field effect transistor (CNFET) using Technique for Order Preference by Similarity to Ideal Solution (TOPSIS). The selection of dielectric material is based on various material indices which include relative dielectric constant $(\\varepsilon_{\\mathrm{r}})$, conduction band offset (CBO), energy band gap $(\\mathrm{E}_{\\mathrm{g}})$ and coefficient of thermal expansion (CTE). Based on the analysis it was observed that $\\text{La}2\\mathrm{O}_{3}$ is the most suitable material followed by HfO2 and $\\mathrm{ZrO}_{2}$ for gate dielectric material in CNFET.","PeriodicalId":344143,"journal":{"name":"2018 IEEE Electron Devices Kolkata Conference (EDKCON)","volume":"115 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE Electron Devices Kolkata Conference (EDKCON)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDKCON.2018.8770503","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
The main objective of this paper is to select the suitable gate dielectric material for the carbon nanotube field effect transistor (CNFET) using Technique for Order Preference by Similarity to Ideal Solution (TOPSIS). The selection of dielectric material is based on various material indices which include relative dielectric constant $(\varepsilon_{\mathrm{r}})$, conduction band offset (CBO), energy band gap $(\mathrm{E}_{\mathrm{g}})$ and coefficient of thermal expansion (CTE). Based on the analysis it was observed that $\text{La}2\mathrm{O}_{3}$ is the most suitable material followed by HfO2 and $\mathrm{ZrO}_{2}$ for gate dielectric material in CNFET.
本文的主要目的是利用TOPSIS (Order Preference by Similarity to Ideal Solution)技术选择适合碳纳米管场效应晶体管(CNFET)的栅极介质材料。介质材料的选择是基于各种材料指标,包括相对介电常数$(\varepsilon_{\mathrm{r}})$、导带偏移(CBO)、能带隙$(\mathrm{E}_{\mathrm{g}})$和热膨胀系数(CTE)。通过分析发现,$\text{La}2\mathrm{O}_{3}$是CNFET栅极介质材料中最合适的材料,其次是HfO2和$\mathrm{ZrO}_{2}$。