The effect of FSG stability at high temperature on stress-induced voiding in Cu dual-damascene interconnects

Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729) Pub Date : 2004-06-07 DOI:10.1109/IITC.2004.1345671

H. Oh, J. Chung, Jungwoo Lee, K. Kang, D. Park, S. Hah, I. Cho, K. Park

引用次数: 2

Abstract

The effect of FSG film properties as inter-metal dielectrics on stress-induced voiding (SIV) phenomena in Cu dual-damascene interconnects has been investigated with various FSG-films. HDPFSG and PEFSG2 showed less SIV failure than those of PEFSGI and 3. These behaviors of SIV according to FSG films agree well with desorbed amount of hydrogen, oxygen and fluorine ions from FSG films at high temperature over 400/spl deg/C. The result of SIMS analysis suggests that SIV phenomena are improved by application of stable FSG film without desorption at high temperature such as HDPFSG and PEFSG2 used in this work.

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FSG高温稳定性对Cu双大马士革互连中应力诱导空化的影响

用不同的FSG薄膜研究了FSG薄膜作为金属间介质对Cu双砷互连中应力诱导空化现象的影响。HDPFSG和PEFSG2比PEFSGI和3的SIV失效更少。FSG膜中SIV的这些行为与高温下FSG膜中氢、氧、氟离子的解吸量基本一致。SIMS分析结果表明，采用HDPFSG和PEFSG2等高温不解吸的稳定FSG膜可以改善SIV现象。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729)

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