A 70 GHz Rotary Traveling Wave Oscillator (RTWO) in 65-nm CMOS

Abstract

In this work, the design and implementation of a 70 GHz Rotary Traveling Wave Oscillator (RTWO) is reported. The gain stage of the oscillator is implemented using a cross-coupled NMOS-PMOS pair instead of the conventional cross-coupled all NMOS or inverter pair. The circuit is fabricated in a standard 65 nm CMOS process with an occupied chip area of 0.95 × 0.6 mm2. Power consumption and output power are 13.33 mW and −6.6 dBm respectively. Compared to traditional gain stage implementation with using cross-coupled inverter pair, proposed design achieves less power consumption.