C. Chiu, P. Tu, Chun-Yen Chang, Shih-Cheng Huang, Jet-Rung Chang, H. Zan, H. Kuo, Chih-Peng Hsu
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引用次数: 2
Abstract
The UV LEDs with quaternary InAlGaN barrier exhibit higher radiative recombination rate and low efficiency droop at a high injection current because of the better band-offset ratio and the higher carrier mobility.
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